BFL4026

No. A1797-1/5

Features

•

ON-resistance RDS(on)=2.8Ω (typ.)

•

Input capacitance Ciss=650pF (typ.)

•

10V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

900

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

IDc*1

Limited only by maximum temperature Tch=150°C

5A

IDpack*2

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

3.5

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

10

A

Allowable Power Dissipation

PD

2.0

W

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

35

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *4

EAS

140

mJ

Avalanche Current *5

IAV

5A

Note :

*1 Shows chip capability

*2 Package limited

*3 SANYO’s condition is radiation from backside.

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

*4 VDD=99V, L=10mH, IAV=5A (Fig.1)

*5 L≤10mH, single pulse

Package Dimensions

unit : mm (typ)

7509-002

70710QB TK IM TC-00002399

SANYO Semiconductors

DATA SHEET

BFL4026

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Ordering number : ENA1797

Product & Package Information

• Package

: TO-220FI(LS)

• JEITA, JEDEC

: SC-67, SOT-186A, TO-220F

• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine

Marking

Electrical Connection

0.7

2.55

2.55

1.2

0.9

0.75

1.2

4.5

2.8

12 3

10.0

3.2

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220FI(LS)

FL4026

LOT No.

1

3

2