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BAP1321-03 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAP1321-03 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2001 May 11 3 Philips Semiconductors Product specification Silicon PIN diode BAP1321-03 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse leakage current VR =60V − 100 nA Cd diode capacitance VR = 0; f = 1 MHz 0.4 − pF VR = 1 V; f = 1 MHz 0.35 0.45 pF VR = 20 V; f = 1 MHz 0.25 0.32 pF rD diode forward resistance f = 100 MHz; note 1 IF = 0.5 mA 3.4 5.0 Ω IF = 1 mA 2.4 3.6 Ω IF = 10 mA 1.2 1.8 Ω IF = 100 mA 0.85 1.3 Ω |s 21| 2 isolation VR = 0; f = 900 MHz 16.6 − dB VR = 0; f = 1800 MHz 11.6 − dB VR = 0; f = 2450 MHz 9.2 − dB |s 21| 2 insertion loss IF = 0.5 mA; f = 900 MHz 0.26 − dB IF = 0.5 mA; f = 1800 MHz 0.35 − dB IF = 0.5 mA; f = 2450 MHz 0.44 − dB |s 21| 2 insertion loss IF = 1 mA; f = 900 MHz 0.20 − dB IF = 1 mA; f = 1800 MHz 0.29 − dB IF = 1 mA; f = 2450 MHz 0.38 − dB |s21|2 insertion loss IF = 10 mA; f = 900 MHz 0.13 − dB IF = 10 mA; f = 1800 MHz 0.22 − dB IF = 10 mA; f = 2450 MHz 0.32 − dB |s21|2 insertion loss IF = 100 mA; f = 900 MHz 0.10 − dB IF = 100 mA; f = 1800 MHz 0.20 − dB IF = 100 mA; f = 2450 MHz 0.29 − dB τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA 0.5 −µs LS series inductance IF = 100 mA; f = 100 MHz 1.5 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 120 K/W |
Similar Part No. - BAP1321-03_01 |
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Similar Description - BAP1321-03_01 |
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