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MCP14E6T Datasheet(PDF) 3 Page - Microchip Technology |
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MCP14E6T Datasheet(HTML) 3 Page - Microchip Technology |
3 / 30 page © 2011 Microchip Technology Inc. DS25006A-page 3 MCP14E6/7/8 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage ................................................................+20V Input Voltage ............................... (VDD + 0.3V) to (GND – 5V) Enable Voltage .............................(VDD + 0.3V) to (GND - 5V) Input Current (VIN>VDD)................................................50 mA Package Power Dissipation (TA = +50oC) 8L-DFN ........................................................................ Note 3 8L-PDIP ........................................................................1.12W 8L-SOIC .....................................................................669 mW † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specifica- tion is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS(2) Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.5 — V Logic ‘0’, Low Input Voltage VIL —1.3 0.8 V Input Current IIN -1 — 1 µA 0V ≤ VIN ≤ VDD Input Voltage VIN -5 — VDD + 0.3 V Output High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH —5 8 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL —5 8 Ω IOUT = 10 mA, VDD = 18V Peak Output Current IPK —2 — A VDD = 18V(2) Switching Time(1) Rise Time tR —12 30 ns Figure 4-1, Figure 4-2, CL = 1000 pF Fall Time tF —15 35 ns Figure 4-1, Figure 4-2, CL = 1000 pF Propagation Delay Time tD1 —45 55 ns Figure 4-1, Figure 4-2 Propagation Delay Time tD2 —45 55 ns Figure 4-1, Figure 4-2 Enable Function (ENB_A, ENB_B) High-Level Input Voltage VEN_H 2.4 1.6 — V VDD = 12V, Low-to-High Transition Low-Level Input Voltage VEN_L —1.2 0.8 V VDD = 12V, High-to-Low Transition Hysteresis VHYST — 400 — mV Enable Pull-up Impedance RENBL 0.7 1.6 3.0 M Ω VDD = 14V, ENBL = GND Enable Pin Leakage Current IENBL —10 — µA VDD =12V, ENB_A = ENB_B = GND Propagation Delay Time tD3 —35 65 ns VDD =12V, Figure 4-3 Propagation Delay Time tD4 —35 65 ns VDD =12V, Figure 4-3 Note 1: Switching times are ensured by design. 2: Tested during characterization, not production tested. 3: Package power dissipation is dependent on the copper pad area of the PCB. |
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