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MCP14E7T Datasheet(PDF) 4 Page - Microchip Technology |
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MCP14E7T Datasheet(HTML) 4 Page - Microchip Technology |
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4 / 30 page  MCP14E6/7/8 DS25006A-page 4 © 2011 Microchip Technology Inc. Power Supply Supply Voltage VDD 4.5 — 18.0 V Supply Current IDD — 1000 1800 µA VIN_A =3V, VIN_B =3V, ENB_A = ENB_B = High IDD — 600 900 µA VIN_A =0V, VIN_B =0V, ENB_A = ENB_B = High IDD — 800 1600 µA VIN_A =3V, VIN_B =0V, ENB_A = ENB_B = High IDD — 800 1600 µA VIN_A =0V, VIN_B =3V, ENB_A = ENB_B = High IDD — 600 1000 µA VIN_A =3V, VIN_B =3V, ENB_A = ENB_B = Low IDD — 300 450 µA VIN_A =0V, VIN_B =0V, ENB_A = ENB_B = Low IDD — 500 800 µA VIN_A =3V, VIN_B =0V, ENB_A = ENB_B = Low IDD — 500 800 µA VIN_A =0V, VIN_B =3V, ENB_A = ENB_B = Low DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)(2) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL —— 0.8 V Input Current IIN -10 — +10 µA 0V ≤ VIN ≤ VDD Output High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH —8 11 Ω IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL —8 11 Ω IOUT = 10 mA, VDD = 18V Switching Time(1) Rise Time tR —23 35 ns Figure 4-1, Figure 4-2, CL = 1000 pF Fall Time tF —23 40 ns Figure 4-1, Figure 4-2, CL = 1000 pF Propagation Delay Time tD1 —50 65 ns Figure 4-1, Figure 4-2 Propagation Delay Time tD2 —50 65 ns Figure 4-1, Figure 4-2 Note 1: Switching times are ensured by design. 2: Tested during characterization, not production tested. DC CHARACTERISTICS(2) (CONTINUED) Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Note 1: Switching times are ensured by design. 2: Tested during characterization, not production tested. 3: Package power dissipation is dependent on the copper pad area of the PCB. |
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Similar Description - MCP14E7T |
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