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BFG10 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFG10 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 1995 Aug 31 3 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point up to Ts =60 °C; note 1; Ptot = 400 mW 290 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector leakage current VCE =5V; VBE =0 − 100 µA hFE DC current gain IC = 50 mA; VCE =5V 25 − Cc collector capacitance IE =ie = 0; VCB = 3.6 V; f = 1 MHz − 3pF Cre feedback capacitance IC = 0; VCE = 3.6 V; f = 1 MHz − 2pF Fig.2 Power derating curve handbook, halfpage 0 50 100 200 200 0 MLC818 150 T ( C) o s Ptot (mW) 300 500 400 100 IC = 0; f = 1 MHz. Fig.3 Collector capacitance as a function of collector-base voltage; typical values. handbook, halfpage MLC819 010 48 2.0 0 1.5 6 1.0 0.5 C c (pF) VCB (V) 2 |
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