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BFQ540 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFQ540 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2000 May 23 2 Philips Semiconductors Product specification NPN wideband transistor BFQ540 FEATURES • High gain • High output voltage • Low noise • Gold metallization ensures excellent reliability • Low thermal resistance. APPLICATIONS • VHF, UHF and CATV amplifiers. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base Fig.1 SOT89. Marking code: N4. page 12 3 Bottom view MBK514 QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage RBE =0 −− 15 V VEBO collector-base voltage open collector −− 2V IC collector current (DC) −− 120 mA Ptot total power dissipation Ts ≤ 60 °C; note 1 −− 1.2 W hFE DC current gain IC = 40 mA; VCE =8V; Tj =25 °C 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C − 9 − GHz insertion power gain IC = 40 mA; VCE =8V; f = 900 MHz; Tamb =25 °C 12 13 − dB F noise figure IC = 40 mA; VCE =8V; f = 900 MHz; ΓS = Γopt − 1.9 2.4 dB s 21 2 |
Similar Part No. - BFQ540_07 |
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Similar Description - BFQ540_07 |
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