K4T51083QG-HCLE6 datasheet(6/47 Pages) SAMSUNG

Part #	K4T51083QG-HCLE6

Description	512Mb G-die DDR2 SDRAM Specification

Download	47 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 47 page

Rev. 1.4 December 2008

DDR2 SDRAM

K4T51083QG

K4T51163QG

6 of 47

K4T51043QG

A

B

C

D

E

F

G

H

J

K

L

VDD

NU/

VSS

DQ6

VSSQ

VDDQ

VSSQ

DQS

DQ7

DQ0

VDDQ

DQ2

VSSQ

DQ5

VSSDL

VDD

CK

RAS

CK

CAS

CS

A2

A6

A4

A11

A8

NC

A13

NC

A12

A9

A7

A5

A0

VDD

A10/AP

VSS

VDDQ

VSSQ

DQ1

DQ3

DQ4

VDDL

A1

A3

BA1

VREF

VSS

CKE

WE

BA0

VDD

VSS

DM/

RDQS

NC

ODT

Note :

1. Pins B3 and A2 have identical capacitance as pins B7 and A8.

2. For a read, when enabled, strobe pair RDQS & RDQS are identical in

function and timing to strobe pair DQS & DQS and input masking function

is disabled.

3. The function of DM or RDQS/RDQS are enabled by EMRS command.

4. VDDL and VSSDL are power and ground for the DLL.

+

++

+

12

34

56

78

9

A

B

C

D

E

F

G

H

J

K

L

+

Ball Locations (x8)

: Populated Ball

+ : Depopulated Ball

Top View (See the balls through the package)

12

3

7

8

9

3.2 x8 package pinout (Top View) : 60ball FBGA Package

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K4T51083QG-HCLE6 Datasheet(PDF) 6 Page - Samsung semiconductor

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