Synchronous DRAM

Rev. 1.23 March 2009

8 of 15

K4S280832K

K4S281632K

Parameter

Symbol

Value

Unit

-1.0 ~ 4.6

V

-1.0 ~ 4.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

1W

Short circuit current

50

mA

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Note :

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

3.0

3.3

3.6

V

Input logic high voltage

2.0

3.0

V

1

Input logic low voltage

-0.3

0

0.8

V

2

Output logic high voltage

2.4

-

-

V

Output logic low voltage

--

0.4

V

Input leakage current

-10

-

10

uA

3

3. Any input 0V

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

Notes :

Pin

Symbol

Min

Max

Unit

Clock

2.5

3.5

pF

RAS, CAS, WE, CS, CKE, DQM

2.5

3.8

pF

Address

2.5

3.8

pF

(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~ DQ15)

4.0

6.0

pF

8.0 Absolute Maximum Ratings

9.0 DC Operating Conditions

10.0 Capacitance