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CY7C1420KV18-333BZC Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY7C1420KV18-333BZC Datasheet(HTML) 9 Page - Cypress Semiconductor |
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9 / 32 page  CY7C1416KV18, CY7C1427KV18 CY7C1418KV18, CY7C1420KV18 Document Number: 001-57827 Rev. *B Page 9 of 32 Functional Overview The CY7C1416KV18, CY7C1427KV18, CY7C1418KV18, and CY7C1420KV18 are synchronous pipelined burst SRAMs equipped with a DDR interface, which operates with a read latency of one and a half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS the device behaves in DDR-I mode with a read latency of one clock cycle. Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C, or K/K when in single clock mode). All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C, or K/K when in single clock mode). All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K). CY7C1418KV18 is described in the following sections. The same basic descriptions apply to CY7C1416KV18, CY7C1427KV18, and CY7C1420KV18. Read Operations The CY7C1418KV18 is organized internally as a two arrays of 1 M × 18. Accesses are completed in a burst of 2 sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the read address register and the least significant bit of the address is presented to the burst counter. The burst counter increments the address in a linear fashion. Following the next K clock rise, the corresponding 18-bit word of data from this address location is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C the next 18-bit data word from the address location generated by the burst counter is driven onto the Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C or C, or K and K when in single clock mode, 200 MHz, 250 MHz, and 300 MHz device). To maintain the internal logic, each read access must be allowed to complete. Read accesses can be initiated on every rising edge of the positive input clock (K). When read access is deselected, the CY7C1418KV18 first completes the pending read transactions. Synchronous internal circuitry automatically tristates the output following the next rising edge of the positive output clock (C). This enables for a transition between devices without the insertion of wait states in a depth expanded memory. Write Operations Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the write address register and the least significant bit of the address is presented to the burst counter. The burst counter increments the address in a linear fashion. On the following K clock rise, the data presented to D[17:0] is latched and stored into the 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the Negative Input Clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. Write accesses can be initiated on every rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When the write access is deselected, the device ignores all inputs after the pending write operations have been completed. Byte Write Operations Byte write operations are supported by the CY7C1418KV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate byte write select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the byte write select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature is used to simplify read, modify, or write operations to a byte write operation. Single Clock Mode The CY7C1418KV18 is used with a single clock that controls both the input and output registers. In this mode, the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power on. This function is a strap option and not alterable during device operation. DDR Operation The CY7C1418KV18 enables high performance operation through high clock frequencies (achieved through pipelining) and DDR mode of operation. The CY7C1418KV18 requires a single No Operation (NOP) cycle during transition from a read to a write cycle. At higher frequencies, some applications may require a second NOP cycle to avoid contention. If a read occurs after a write cycle, address and data for the write are stored in registers. The write information must be stored because the SRAM cannot perform the last word write to the array without conflicting with the read. The data stays in this register until the next write cycle occurs. On the first write cycle after the read(s), the stored data from the earlier write is written into the SRAM array. This is called a posted write. If a read is performed on the same address on which a write is performed in the previous cycle, the SRAM reads out the most current data. The SRAM does this by bypassing the memory array and reading the data from the registers. Depth Expansion Depth expansion requires replicating the LD control signal for each bank. All other control signals can be common between banks as appropriate. [+] Feedback |
Similar Part No. - CY7C1420KV18-333BZC |
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Similar Description - CY7C1420KV18-333BZC |
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