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K7A163630B-QI16 Datasheet(PDF) 9 Page - Samsung semiconductor |
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K7A163630B-QI16 Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 19 page 512Kx36 & 1Mx18 Synchronous SRAM - 9 - K7A161830B K7A163630B Rev. 3.0 April 2006 CAPACITANCE*(TA=25°C, f=1MHz) *Note : Sampled not 100% tested. PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Input Capacitance CIN VIN=0V - 5 pF Output Capacitance COUT VOUT=0V - 6 pF OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C) Notes: 1. The above parameters are also guaranteed at industrial temperature range. 2. It should be VDDQ ≤ VDD. PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD1 2.375 2.5 2.625 V VDDQ1 2.375 2.5 2.625 V VDD2 3.135 3.3 3.465 V VDDQ2 3.135 3.3 3.465 V Ground VSS 00 0 V ABSOLUTE MAXIMUM RATINGS* *Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PARAMETER SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS VDD -0.3 to 4.6 V Voltage on VDDQ Supply Relative to VSS VDDQ VDD V Voltage on Input Pin Relative to VSS VIN -0.3 to VDD+0.3 V Voltage on I/O Pin Relative to VSS VIO -0.3 to VDDQ+0.3 V Power Dissipation PD 1.6 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TOPR 0 to 70 °C Industrial TOPR -40 to 85 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C VDDQ VIL VDDQ+1.0V 20% tCYC(MIN) VSS VIH VSS-1.0V 20% tCYC(MIN) Undershoot Timing Overshoot Timing VDDQ+0.5V VSS-0.5V |
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