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K7D163674B-HC37 Datasheet(PDF) 2 Page - Samsung semiconductor

Part # K7D163674B-HC37
Description  512Kx36 & 1Mx18 SRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7D163674B-HC37 Datasheet(HTML) 2 Page - Samsung semiconductor

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Rev 1.1
512Kx36 & 1Mx18 SRAM
- 2 -
Jan. 2005
K7D161874B
K7D163674B
ORDERING INFORMATION
Part Number
Organization
Maximum
Frequency
K7D163674B-HC37
512Kx36
375MHz
K7D163674B-HC33
333MHz
K7D163674B-HC30
300MHz
K7D163674B-HC27
275MHz
K7D161874B-HC37
1Mx18
375MHz
K7D161874B-HC33
333MHz
K7D161874B-HC30
300MHz
K7D161874B-HC27
275MHz
GENERAL DESCRIPTION
The K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as
524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung's advanced
CMOS technology.
Single differential HSTL level clock, K and K are used to initiate the read/write operation and all internal operations are self-timed. At
the rising edge of K clock, all addresses and burst control inputs are registered internally. Data inputs are registered one cycle after
write addresses are asserted(Late Write), at the rising edge of K clock for single data rate (SDR) write operations and at rising and
falling edge of K clock for a double data rate (DDR) write operations.
Data outputs are updated from output registers off the rising edges of K clock for SDR read operations and off the rising and falling
edges of K clock for DDR read operations. Free running echo clocks are supported which are representive of data output access
time for all SDR and DDR operations.
The chip is operated with a single +2.5V power supply and is compatible with Extended HSTL input and output. The package is
9x17(153) Ball Grid Array balls on a 1.27mm pitch.
FEATURES
• 512Kx36 or 1Mx18 Organizations.
• 1.8~2.5V VDD/1.5V VDDQ.(1.9V max VDDQ)
• HSTL Input and Outputs.
• Single Differential HSTL Clock.
• Synchronous Pipeline Mode of Operation with Self-Timed
Late Write.
• Free Running Active High and Active Low Echo Clock Output
Pin.
• Asynchronous Output Enable.
• Registered Addresses, Burst Control and Data Inputs.
• Registered Outputs.
• Double and Single Data Rate Burst Read and Write.
• Burst Count Controllable With Max Burst Length of 4
• Interleved and Linear Burst mode support
• Bypass Operation Support
• Programmable Impedance Output Drivers.
• JTAG Boundary Scan (subset of IEEE std. 1149.1)
• 153(9x17) Pin Ball Grid Array Package(14mmx22mm)


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