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K7I163682B Datasheet(PDF) 2 Page - Samsung semiconductor |
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K7I163682B Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 18 page 512Kx36 & 1Mx18 DDRII CIO b2 SRAM - 2 - Rev. 5.0 July 2006 K7I163682B K7I161882B Document Title 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.0 2.0 3.0 4.0 5.0 Remark Advance Preliminary Preliminary Preliminary Preliminary Preliminary Preliminary Preliminary Final Final Final Final Final History 1. Initial document. 1. Add the speed bin (-33, -30) 2. Delete the speed bin (-25, -13) 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) 1. Change the Maximum Clock cycle time. 2. Correct the 165FBGA package ball size. 1. Add the power up/down sequencing comment. 2. Update the DC current parameter (Icc and Isb). 3. Change the Max. speed bin from -33 to -30. 1. Change the ISB1. 1. Final spec release 1. Delete the x8 Org. 2. Delete the 300MHz speed bin 1. Add the Industrial temp. & Lead Free Package 1. Add the 300MHz speed bin 1. Change Vss/SA to NC/SA in Pin Configuration Speed Bin From To -30 200 230 -25 180 210 -20 160 190 -16 140 170 Draft Date Oct. 23. 2002 Oct. 24. 2002 Dec. 16, 2002 Jan. 27, 2003 Mar. 20, 2003 April. 4, 2003 June. 20, 2003 Oct. 20. 2003 Oct. 31, 2003 Nov. 28, 2003 Nov. 10. 2004 Mar. 29. 2006 Jul. 26 2006 |
Similar Part No. - K7I163682B_06 |
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Similar Description - K7I163682B_06 |
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