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LE28FV4001R-25 Datasheet(PDF) 8 Page - Sanyo Semicon Device

Part # LE28FV4001R-25
Description  4MEG (52488 x 8 Bits) Flash Memory
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE28FV4001R-25 Datasheet(HTML) 8 Page - Sanyo Semicon Device

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AC Electrical Characteristics at Ta = 0 to +70°C, VDD = 3.3 V ± 0.3 V
AC Testing Conditions (See Figure 13)
Input rise and fall times: ................10 ns (max)
Output load: ....................................1 TTL gate + 30 pF
Read Cycle
Erase/Programming Cycles
Note: All signals must hold valid logic levels during the setup and hold periods.
No. 5409-8/14
LE28FV4001M, T, R-20/25
LE28FV4001M, T, R
Parameter
Symbol
-20
-25
Unit
min
max
min
max
Read cycle time
tRC
200
250
ns
CE access time
tCE
200
250
ns
Address access time
tAA
200
250
ns
OE access time
tOE
100
120
ns
Output low-impedance time from CE
tCLZ
0
0
ns
Output low-impedance time from OE
tOLZ
0
0
ns
Output high-impedance time from CE
tCHZ
60
60
ns
Output high-impedance time from OE
tOHZ
60
60
ns
Output valid time from address input
tOH
0
0
ns
LE28FV4001M, T, R
Parameter
Symbol
-20
-25
Unit
min
max
min
max
Sector erase cycle time
tSE
4
4
ms
Byte programming cycle time
tBP
35
35
µs
Address setup time
tAS
0
0
ns
Address hold time
tAH
50
100
ns
CE and WE setup time
tCS
0
0
ns
CE and WE hold time
tCH
0
0
ns
OE setup time
tOES
10
20
ns
OE hold time
tOEH
10
20
ns
CE pulse width
tCP
100
160
ns
WE pulse width
tWP
100
160
ns
WE standby pulse width
tWPH
50
50
ns
CE standby pulse width
tCPH
50
50
ns
Data setup time
tDS
50
100
ns
Data hold time
tDH
10
20
ns
Reset recovery time
tRST
4
4
µs
CE pulse width in protect mode
tPCP
100
100
ns
CE hold time in protect mode
tPCH
150
150
ns
Address setup time in protect mode
tPAS
30
30
ns
Address hold time in protect mode
tPAH
100
100
ns


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