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MIC94030 Datasheet(PDF) 3 Page - Micrel Semiconductor

Part # MIC94030
Description  TinyFET P-Channel MOSFET
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Manufacturer  MICREL [Micrel Semiconductor]
Direct Link  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC94030 Datasheet(HTML) 3 Page - Micrel Semiconductor

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Micrel, Inc.
MIC94030/MIC94031
July 2006
3
M9999-071106
Absolute Maximum Ratings
(1)
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse).....................................16V
Gate-to-Source Voltage (pulse). ....................................16V
Continuous Drain Current
TA = 25°C...................................................................1A
TA = 100°C..............................................................0.5A
Operating Junction Temperature ..............–55°C to +150°C
Storage Temperature ................................–55°C to +150°C
Total Power Dissipation
TA = 25°C...........................................................568mW
TA = 100°C.........................................................227mW
Thermal Resistance
θJA....................................................................220°C/W
θJC....................................................................130°C/W
Lead Temperature
1/16” from case, 10s.......................................... +300°C
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
Parameter
Condition (Note 1)
Min
Typ
Max
Units
VBDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
13.5
V
VGS
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.6
1.0
1.4
V
IGSS
Gate-Body Leakage
VDS = 0V, VGS = 12V, Note 2, Note 3
1
µA
RGS
Gate-Source Resistor
VDS = 0V, VGS = 12V, Note 2, Note 4
500
750
1000
kΩ
CISS
Input Capacitance
VGS = 0V, VDS = 12V
100
pF
IDSS
Zero Gate Voltage Drain Current
VDS = 12V, VGS = 0V
25
µA
VDS = 12V, VGS = 0V, TJ = 125°C
0.010
250
µA
ID(ON)
On-State Drain Current
VDS = 10V, VGS = 10V, Note 5
6.3
A
RDS(ON)
Drain-Source On-State Resist
VGS = 10V, ID = 100mA
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
0.45
0.75
1.20
1.00
gFS
Forward Transconductance
VDS = 10V, ID = 200mA, Note 5
480
mS
Notes:
1. TA = 25°C unless noted. Substrate connected to source for all conditions.
2. ESD gate protection diode conducts during positive gate-to-source voltage excursions.
3. MIC94030 only.
4. MIC94031 only.
5. Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5%.


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