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LV23000M Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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LV23000M Datasheet(HTML) 3 Page - Sanyo Semicon Device |
3 / 14 page No. 6903-3/14 LV23000M Parameter Symbol Conditions Ratings Unit min typ max [FM Front End Characteristics] : fc = 98 MHz, fm = 1 kHz, 22.5 kHzdev. 3 dB sensitivity 3 dB LS 60 dBµV EMF, referenced to a 22.5 kHz dev. output, 12 dBµV –3 dB input EMF Practical sensitivity QS For a 30 dB signal-to-noise ratio input 12 dBµV EMF [FM IF Monaural Characteristics] : fc = 10.7 MHz, fm = 1 kHz, 75 kHzdev. Demodulator output VO 100 dBµ V, the pin 12 output 210 330 420 mVrms Signal-to-noise ratio S/N 100 dBµ V, the pin 12 output 68 75 dB Total harmonic distortion (mono) THD 100 dBµ V, the pin 12 output 0.3 1.5 % 3 dB sensitivity 3 dB LS 100 dBµ V, referenced to a 75 kHz dev. output, –3 dB input 38 44 dBµV IF counter sensitivity IF-C3 SDC0 = 1, SDC1 = 0, the pin 18 (DO) output 41 51 61 dBµV Muting attenuation Mute-Att 100 dBµ V, the pin 12 output 68 dB [FM IF Stereo Characteristics] : fc = 10.7 MHz, fm = 1 kHz, L+R = 90%, Pilot = 10% Separation SEP 100 dBµ V, L-mod, Pin 12 output/pin 13 output 28 40 dB Total harmonic distortion (main) THD 100 dBµ V, main modulation, the pin 12 output 0.5 1.5 % [AM Characteristics] : fc = 1000 kHz, fm = 1 kHz, 30% mod Detector output 1 VO1 23 dBµ V, the pin 12 output 20 40 80 mVrms Detector output 2 VO2 80 dBµ V, the pin 12 output 60 110 160 mVrms Signal-to-noise ratio 1 S/N1 23 dBµ V, the pin 12 output 1.5 20 dB Signal-to-noise ratio 2 S/N2 80 dBµ V, the pin 12 output 47 54 dB Total harmonic distortion THD 80 dBµ V, the pin 12 output 1.2 3.0 % IF counter sensitivity IF-C The pin 18 (DO) output 16 26 36 dBµV AM low cut LOW-CUT 80 dBµ V, referenced to fm = 1 kHz, 5 8 11 dB the pin 12 output when fm = 100 Hz. [Current Drain] FM tuner block ICCFM In FM mode with no input 20 30 40 mA AM tuner block ICCAM In AM mode with no input 10 20 30 mA PLL block IDD fr = 83 MHz, X'tal = 75 kHz, With no input to the tuner block 1 2 5 mA [PLL Characteristics] Built-in feedback resistor Rf XIN 8 M Ω Built-in output resistor Rd XOUT 250 k Ω Hysteresis VHIS CE, CL, DI 0.1VDD V High-level output voltage VOH PD: IO = –1 mA VDD – 1.0 V VOL1 PD: IO = 1 mA 1.0 V VOL2 BO1, BO2: IO = 1 mA 0.25 V Low-level output voltage VOL2 BO1, BO2: IO = 5 mA 1.25 V VOL3 DO: IO = 1 mA 0.25 V VOL4 AOUT: IO = 1 mA, AIN = 2.0 V 0.5 V IIH1 CE, CL, DI: VI = 6.0 V 5.0 µA High-level input current IIH2 XIN: VI = VDD 0.16 0.9 µA IIH3 AIN: VI = 6.0 V 200 nA IIL1 CE, CL, DI: VI = 0 V 5.0 µA Low-level input current IIL2 XIN: VI = 0 V 0.16 0.9 µA IIL3 AIN: VI = 0 V 200 nA Output leakage current IOFF1 AOUT, BO1, BO2: VO = 10 V 5.0 µA IOFF2 DO: VO = 6.0 V 5.0 µA High-level 3-state off leakage current IOFFH PD: VO = 6.0 V 0.01 200 nA Low-level 3-state off leakage current IOFFL PD: VO = 0 V 0.01 200 nA Operating Characteristics at Ta = 25°C, VCC = 5.0 V, VDD = 3.0 V, in the specified test circuit, using Yamaichi Electronics socket IC51-0362-736 |
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Similar Description - LV23000M |
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