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MA4AGSW1_V5 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA4AGSW1_V5 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page 1 SPST Reflective AlGaAs PIN Diode Switch Rev. V5 MA4AGSW1 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. FEATURES Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.3 dB Insertion Loss 46 dB Isolation at 50 GHz Low Current consumption -5V for low loss state +10mA for Isolation state M/A-COM Tech’s unique AlGaAs hetero-junction anode technology Silicon Nitride Passivation Polymer Scratch protection RoHS Compliant* and 260°C Reflow Compatible DESCRIPTION The MA4AGSW1 is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Tech’s patented hetero- junction technology. This technology produces a switch with less loss than conventional GaAs proc- esses. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. APPLICATIONS The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use in switching arrays for radar systems, radiometers, test equipment and other multi-assembly compo- nents. Yellow areas indicate bond pads J1 J2 Absolute Maximum Ratings @ TAMB = +25°C Parameter Maximum Rating Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Incident C.W. RF Power +23dBm C.W. Breakdown Voltage 25V Bias Current ± 25mA Junction Temperature +150°C * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C. |
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