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MA4AGSW1 Datasheet(PDF) 5 Page - M/A-COM Technology Solutions, Inc.

Part # MA4AGSW1
Description  SPST Reflective AlGaAs PIN Diode Switch
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MA4AGSW1 Datasheet(HTML) 5 Page - M/A-COM Technology Solutions, Inc.

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5
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
MA4AGSW1
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MA4AGSW1 Schematic with 2-18 GHz Bias Network
Operation of the MA4AGSW1 Switch
The application of 0V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1
SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the diode
bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The backside area
of the die is the RF and DC return ground plane. The bias network design should yield >30 dB RF to DC isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information.
The lowest insertion loss, P1dB, IP
3, and switching speed is achieved by applying a minimum value of | -2V | at
D.C. Bias node, which is achievable with a standard, ± 5V TTL Controlled PIN Diode Driver.
Note: The bias network can be connected to either J1 or J2
CONTROL LEVEL (DC CURRENT)
RF OUTPUT STATE
J1 or J2
J1-J2
-5V
Low Loss
+10mA
Isolation
TYPICAL DRIVER CONNECTIONS


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