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MA4AGSW1 Datasheet(PDF) 5 Page - M/A-COM Technology Solutions, Inc. |
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MA4AGSW1 Datasheet(HTML) 5 Page - M/A-COM Technology Solutions, Inc. |
5 / 7 page 5 SPST Reflective AlGaAs PIN Diode Switch Rev. V5 MA4AGSW1 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA4AGSW1 Schematic with 2-18 GHz Bias Network Operation of the MA4AGSW1 Switch The application of 0V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1 SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the diode bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The backside area of the die is the RF and DC return ground plane. The bias network design should yield >30 dB RF to DC isolation. Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad- band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information. The lowest insertion loss, P1dB, IP 3, and switching speed is achieved by applying a minimum value of | -2V | at D.C. Bias node, which is achievable with a standard, ± 5V TTL Controlled PIN Diode Driver. Note: The bias network can be connected to either J1 or J2 CONTROL LEVEL (DC CURRENT) RF OUTPUT STATE J1 or J2 J1-J2 -5V Low Loss +10mA Isolation TYPICAL DRIVER CONNECTIONS |
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