MHV5IC1810N_11 datasheet(6/17 Pages) FREESCALE

Part #	MHV5IC1810N

Description	RF LDMOS Wideband Integrated Power Amplifier

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MHV5IC1810NR2

TYPICAL CHARACTERISTICS — 1930--1990 MHz

2000

27

35

1900

--50

--10

IRL

Gps

IMD

f, FREQUENCY (MHz)

VDD =28 Vdc,Pout =5 W(Avg.)

IDQ1 = 120 mA, IDQ2 =90 mA

100 kHz Tone Spacing

34

--15

33

--20

32

--25

31

--30

30

--35

29

--40

28

--45

1920

1940

1960

Figure 5. Two--Tone Wideband Performance

@Pout = 5 Watts (Avg.)

PAE

1980

2000

0

35

1900

--70

0

IRL

Gps

IMD

f, FREQUENCY (MHz)

VDD =28 Vdc,Pout =20 dBm (Avg.)

IDQ1 = 120 mA, IDQ2 =90 mA

100 kHz Tone Spacing

--10

30

--20

25

--30

20

15

--50

10

--60

1920

1940

1960

Figure 6. Two--Tone Wideband Performance

@Pout =20 dBm (Avg.)

PAE

1980

Pout, OUTPUT POWER (WATTS) PEP

25

32

1

IDQ1 = 120 mA

IDQ2 = 140 mA

VDD =28 Vdc

Center Frequency = 1960 MHz

100 kHz Tone Spacing

30

28

27

10

100

Figure 7. Two--Tone Power Gain versus

Output Power

100

--80

--10

0.1

7th Order

VDD =28 Vdc

IDQ1 = 120 mA, IDQ2 =90 mA

f = 1960 MHz, 100 kHz Tone Spacing

5th Order

3rd Order

110

--20

--30

--40

--50

--60

--70

Pout, OUTPUT POWER (WATTS) PEP

Figure 8. Intermodulation Distortion Products

versus Output Power

5

--40

31

29

26

IDQ1 = 120 mA

IDQ2 =115 mA

IDQ1 = 120 mA

IDQ2 =65 mA

IDQ1 =60 mA

IDQ2 =90 mA

IDQ1 = 120 mA

IDQ2 =90 mA

IDQ1 = 120 mA

IDQ2 =45 mA

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