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MCH6608 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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MCH6608 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page MCH6608 No.7040-1/4 Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 0.65 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 2.6 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2!0.8mm)1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 10 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=150mA 400 560 mS RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω Marking : FH Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN7040 MCH6608 Package Dimensions unit : mm 2173A [MCH6608] 82201 TS IM TA-2463 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 2.0 0.65 0.3 0.15 1 12 3 65 4 32 5 46 Preliminary |
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