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MAADSS0013SMB Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAADSS0013SMB Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 4 page Digital Attenuator, 4-Bit, Single Control 15 dB, 0.05 - 4.0 GHz Rev. V2 MAADSS0013 2 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications 7,8: TA = 25°C, Z0 = 50 Ω, VDD = 5 V, VC = 2.8 V Parameter Test Conditions Units Min. Typ. Max. Reference Insertion Loss 1.0 GHz dB — 1.0 1.3 Attenuation Accuracy 1.0 GHz ± (0.2 dB + 2% of attenuation setting in dB) dB VSWR 0.05 - 4.0 GHz Ratio — 1.5:1 — Trise, Tfall 10% to 90% RF, 90% to 10% RF ns — 40 — Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF ns — 65 — Transients In Band mV — 75 — Input P1dB 2.0 GHz dBm — 30 — Input IP2 2-Tone, +5 dBm/tone, 1 MHz Spacing 0.5 GHz 2.0 GHz dBm — — 75 80 — — Input IP3 2-Tone, +5 dBm/tone, 1 MHz Spacing 0.5, 2.0 GHz dBm — 42 — IC VC = 2.8 V µA — 15 25 IDD VDD = 5 V µA — 170 250 7. External DC blocking capacitors are required on all RF ports. 8. Low frequency performance is determined by DC block and GND capacitor value. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Truth Table 9 VC1 VC2 VC4 VC8 Attenuation (dB) 0 0 0 0 Reference IL 1 0 0 0 1 0 1 0 0 2 0 0 1 0 4 0 0 0 1 8 1 1 1 1 15 9. 0 = 0 V , 1 = +2.8 to 5 V. |
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