DE275X2-501N16A

RF Power MOSFET

Symbol

Test Conditions

Characteristic Values

min.

typ.

max.

0.3

Ω

1800

pF

f = 1 MHz

150

pF

45

pF

3

ns

2

ns

4

ns

5

ns

50

nC

20

nC

30

nC

Back Metal to any Pin

21

pF

Source-Drain Diode

Characteristic Values

Symbol

Test Conditions

min.

typ.

max.

16

A

186

A

1.5

V

200

ns

Pulse test, t

≤ 300 µs, duty cycle ≤ 2%

0.8

µC

6.5

A

IXYS RF reserves the right to change limits, test conditions and dimensions.

IXYS RF MOSFETS are covered by one or more of the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,891,686

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

5,640,045

(1) These parameters apply to the package, not individual MOSFET devices.

For detailed device mounting and installation instructions, see the “DE-

Series MOSFET Mounting Instructions” technical note on IXYS RF’s web

site at www.ixysrf.com/Technical_Support/App_notes.html