Electronic Components Datasheet Search |
|
2N65L-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
|
2N65L-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 2N65 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-370.a ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 10 30 ns Turn-On Rise Time tR 25 60 ns Turn-Off Delay Time tD(OFF) 20 50 ns Turn-Off Fall Time tF VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) 25 60 ns Total Gate Charge QG 9.0 11 nC Gate-Source Charge QGS 1.6 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 4.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A Reverse Recovery Time tRR 180 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note1) 0.72 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
Similar Part No. - 2N65L-TA3-T |
|
Similar Description - 2N65L-TA3-T |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |