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2N65L-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 2N65L-TA3-T
Description  2 Amps, 650 Volts N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N65L-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies

  2N65L-TA3-T Datasheet HTML 1Page - Unisonic Technologies 2N65L-TA3-T Datasheet HTML 2Page - Unisonic Technologies 2N65L-TA3-T Datasheet HTML 3Page - Unisonic Technologies 2N65L-TA3-T Datasheet HTML 4Page - Unisonic Technologies 2N65L-TA3-T Datasheet HTML 5Page - Unisonic Technologies 2N65L-TA3-T Datasheet HTML 6Page - Unisonic Technologies  
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2N65
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-370.a
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
10
30
ns
Turn-On Rise Time
tR
25
60
ns
Turn-Off Delay Time
tD(OFF)
20
50
ns
Turn-Off Fall Time
tF
VDD =300V, ID =2.4A, RG=25Ω
(Note 1, 2)
25
60
ns
Total Gate Charge
QG
9.0
11
nC
Gate-Source Charge
QGS
1.6
nC
Gate-Drain Charge
QGD
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
4.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
1.4
V
Continuous Drain-Source Current
ISD
2.0
A
Pulsed Drain-Source Current
ISM
8.0
A
Reverse Recovery Time
tRR
180
ns
Reverse Recovery Charge
QRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note1)
0.72
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature


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