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2N70 Datasheet(PDF) 3 Page - Unisonic Technologies |
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2N70 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 2N70 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-334.C ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 30 ns Turn-On Rise Time tR 80 ns Turn-Off Delay Time tD(OFF) 50 ns Turn-Off Fall Time tF VDD =350V, ID =2.0A, RG=25Ω (Note 1, 2) 70 ns Total Gate Charge QG 8.1 11 nC Gate-Source Charge QGS 1.7 nC Gate-Drain Charge QGD VDS=560V, VGS=10V, ID=2.0A (Note 1, 2) 4.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A Reverse Recovery Time tRR 260 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 2.0A di/dt = 100 A/μs (Note1) 1.09 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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