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2N90G-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N90G-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page  2N90 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-478.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 1) VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous ID 2.2 A Drain Current Pulsed (Note 1) IDM 8.8 A Avalanche Current (Note 1) IAR 2.2 A Single Pulsed (Note 2) EAS 170 mJ Avalanche Energy Repetitive (Note 1) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns TO-220F 25 W Power Dissipation TO-252 PD 43 W/°C Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C THERMAL CHARACTERISTICS PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-220F 62.5 °C/W Junction to Ambient TO-252 θJA 110 °C/W TO-220F 5 °C/W Junction to Case TO-252 θJC 2.85 °C/W |
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