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2N65G-TM3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N65G-TM3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 2N65 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-370.a ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current Pulsed (Note 2) IDM 8.0 A Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 54 W TO-220F/TO-220F1 23 W Power Dissipation TO-251/TO-252 PD 44 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-220 62.5 °С/W TO-220F/TO-220F1 62.5 °С/W Junction to Ambient TO-251/TO-252 θJA 50 °С/W TO-220 2.32 °С/W TO-220F/TO-220F1 5.5 °С/W Junction to Case TO-251/TO-252 θJc 2.87 °С/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 μA Forward VGS = 30V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/T △ J ID = 250 μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 3.8 5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 270 350 pF Output Capacitance COSS 40 50 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f =1MHz 5 7 pF |
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