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2N3904L-T92-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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2N3904L-T92-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2N3904 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-027,C ABSOLUTE MAXIMUM RATING (Ta=25°С) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 °С Operating and Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0 60 V Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0 40 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V VCE(SAT)1 IC=10mA, IB=1mA 0.2 V Collector-Emitter Saturation Voltage (note) VCE(SAT)2 IC=50mA, IB=5mA 0.3 V VBE(SAT)1 IC=10mA, IB=1mA 0.65 0.85 V Base-Emitter Saturation Voltage (note) VBE(SAT)2 IC=50mA, IB=5mA 0.95 V Collector Cut-off Current ICBO VCE=30V, VEB=3V 50 nA Base Cut-off Current IBL VCE=30V, VEB=3V 50 nA hFE1 VCE=1V, IC=0.1mA 40 hFE2 VCE=1V, IC=1mA 70 hFE3 VCE=1V, IC=10mA 100 300 hFE4 VCE=1V, IC=50mA 60 DC Current Gain (note) hFE5 VCE=1V, IC=100mA 30 Current Gain Bandwidth Product fT VCE=20V, IC=10mA, f=100MHz 300 MHz Output Capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF Turn on Time tON VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA 70 ns Turn off Time tOFF IB1=1B2=1mA 250 ns Note: Pulse test: Pulse Width≦300 μs, Duty Cycle≦2% |
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