2SB798

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-020.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-30

V

Collector-Emitter Voltage

-25

V

Emitter-Base Voltage

-5.0

V

DC

-1.0

A

Collector Current

Pulse(Note 1)

-1.5

A

Collector Dissipation (Note 2)

2

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1. PW≦10ms,Duty Cycle≦50%

2. When mounted on a ceramic substrate of 16cm

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

-100

nA

Emitter Cut-Off Current

-100

nA

DC Current Gain

90

200

400

DC Current Gain

50

100

Base to Emitter Voltage

-600

-640

-700

mV

Collector-Emitter Saturation

Voltage

-0.25

-0.40

V

Base-Emitter Saturation Voltage

-1.0

-1.2

V

Gain Bandwidth Product

110

MHz

Output Capacitance

36

pF

Note: 3. PW≦350μs, Duty Cycle≦2%

CLASSIFICATION OF hFE1

MARKING

DM

DL

DK

hFE1

90-180

135-270

200-400