2SB1116/A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-066.B

PARAMETER

SYMBOL

RATINGS

UNIT

2SB1116

-60

Collector to Base Voltage

2SB1116A

-80

V

2SB1116

-50

Collector to Emitter Voltage

2SB1116A

-60

V

Emitter to Base Voltage

-6

V

DC

-1

A

Collector Current

Pulse(Note2)

-2

A

Total Power Dissipation

0.75

mW

Junction Temperature

+150

°C

Operating Temperature

-20 ~ +85

℃

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width≦10ms, Duty cycle≦50%

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

-0.2

V

Base-Emitter Saturation Voltage(Note)

-0.9

-1.2

V

Base Emitter On Voltage(Note)

-600

-650

-700

mV

Collector Cut-Off Current

-100

nA

Emitter Cut-Off Current

-100

nA

2SB1116

135

600

2SB1116A

135

400

DC Current Gain(Note)

81

Transition Frequency

70

120

MHz

Output Capacitance

25

pF

Turn On Time

0.07

μs

Storage Time

0.7

μs

Fall Time

0.07

μs

Note: Pulse Test: Pulse width≦350μs, Duty cycle 2%

≦

RANK

Y

G

L

hFE1

135 ~ 270

200 ~ 400

300 ～ 600