2SD1628

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-045.a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

20

V

Emitter-Base Voltage

6

V

DC

5

A

Collector Current

Pulse

8

A

Collector Dissipation

0.5

W

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Emitter Saturation Voltage

500

mV

Base-Emitter Saturation Voltage

1.5

V

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

120

560

DC Current Gain

95

Output Capacitance

45

pF

Transition Frequency

120

MHz

Turn On Time

30

ns

Storage Time

300

ns

Fall Time

See specified Test circuit

40

ns

■

RANK

E

F

G

RANGE

120 ~ 200

160 ~ 320

280 ~ 560