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3LN01M Datasheet(PDF) 1 Page - Unisonic Technologies |
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3LN01M Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 3 page UNISONIC TECHNOLOGIES CO., LTD 3LN01M Preliminary Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-285.a N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The 3LN01M uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications. FEATURES * RDS(ON) = 3.7Ω @VGS = 4 V * Ultra low gate charge ( typical 1.58 nC ) * Low reverse transfer capacitance ( CRSS = typical 2.3 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Gate 1.Source 3.Drain Lead-free: 3LN01ML Halogen-free: 3LN01MG ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen-Free Package 1 2 3 Packing 3LN01M-AL3-R 3LN01ML-AL3-R 3LN01MG-AL3-R SOT-323 S G D Tape Reel MARKING |
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