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4N60G-X-TQ3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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4N60G-X-TQ3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 4N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-061,N ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 4N60-A 600 V Drain-Source Voltage 4N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A 4N60 260 mJ Single Pulsed (Note 3) EAS 4N60-E 200 mJ Avalanche Energy Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 36 W TO-251 50 W Power Dissipation TO-252 PD 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-220/TO-262/TO-263 62.5 °С/W TO-220F/TO-220F1 62.5 °С/W TO-251 83 °С/W Junction to Ambient TO-252 θJA 83 °С/W TO-220/TO-262/TO-263 1.18 °С/W TO-220F/TO-220F1 3.47 °С/W TO-251 2.5 °С/W Junction to Case TO-252 θJc 2.5 °С/W ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 4N60-A 600 V Drain-Source Breakdown Voltage 4N60-B BVDSS VGS = 0 V, ID = 250 μA 650 V Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250 μA, Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2 A 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 520 670 pF Output Capacitance COSS 70 90 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0 V, f = 1MHz 8 11 pF |
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