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4N60G-X-TQ3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 4N60G-X-TQ3-R
Description  4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N60G-X-TQ3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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4N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-061,N
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
4N60-A
600
V
Drain-Source Voltage
4N60-B
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
4N60
260
mJ
Single Pulsed (Note 3)
EAS
4N60-E
200
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
36
W
TO-251
50
W
Power Dissipation
TO-252
PD
50
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
UNIT
TO-220/TO-262/TO-263
62.5
°С/W
TO-220F/TO-220F1
62.5
°С/W
TO-251
83
°С/W
Junction to Ambient
TO-252
θJA
83
°С/W
TO-220/TO-262/TO-263
1.18
°С/W
TO-220F/TO-220F1
3.47
°С/W
TO-251
2.5
°С/W
Junction to Case
TO-252
θJc
2.5
°С/W
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
4N60-A
600
V
Drain-Source Breakdown Voltage
4N60-B
BVDSS
VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
10
μA
Forward
VGS = 30 V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
DSS/△TJ
ID = 250 μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2 A
2.5
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
520 670
pF
Output Capacitance
COSS
70
90
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
8
11
pF


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