4N65

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-397.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

4.4

A

Continuous

4.0

A

Drain Current

Pulsed (Note 2)

16

A

Single Pulsed (Note 3)

260

mJ

Avalanche Energy

Repetitive (Note 2)

10.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

106

W

TO-220F/TO-220F1

36

W

TO-251

50

W

Power Dissipation

TO-252

50

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

650

V

Drain-Source Leakage Current

10

μA

Forward

100

nA

Gate-Source Leakage Current

Reverse

-100

nA

Breakdown Voltage Temperature Coefficient

BV

△

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

2.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

520 670

pF

Output Capacitance

70

90

pF

Reverse Transfer Capacitance

8

11

pF