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5N90G-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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5N90G-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 5N90 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-499.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 1.0 V/°C VDS=900V, VGS=0V 10 µA Drain-Source Leakage Current IDSS VDS=720V, TC=125°C 100 µA Forward VDS=0V ,VGS=30V 100 nA Gate-Source Leakage Current Reverse IGSS VDS=0V ,VGS=-30V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A 1.8 2.3 Ω Forward Transconductance gFS VDS=50V, ID=2.5A (Note 4) 4.0 S DYNAMIC PARAMETERS Input Capacitance CISS 1200 1550 pF Output Capacitance COSS 110 145 pF Reverse Transfer Capacitance CRSS VDS=25V,VGS=0V,f=1.0MHz 13 17 pF SWITCHING PARAMETERS Total Gate Charge QG 31 40 nC Gate-Source Charge QGS 7.2 nC Gate-Drain Charge QGD VDS=720V, VGS=10V, ID=5A (Note 4,5) 15 nC Turn-ON Delay Time tD(ON) 28 65 ns Turn-ON Rise Time tR 65 140 ns Turn-OFF Delay Time tD(OFF) 65 140 ns Turn-OFF Fall Time tF VDD=450V, ID=5A, RG=25Ω (Note 4,5) 50 110 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 5 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS =5A, VGS=0V 1.4 V Body Diode Reverse Recovery Time tRR 610 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=5.4A, dIF/dt=100A/μs (Note 4) 5.26 μC Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=52.8mH, IAS=5A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤5.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature |
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