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6N60G-X-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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6N60G-X-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 6N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-117.D ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 6N60-A 600 V Drain-Source Voltage 6N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Single Pulsed (Note 3) EAS 440 mJ Avalanche Energy Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns TO-220 125 W TO-220F/TO-220F1 40 W Power Dissipation TO-251/TO-252 PD 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62.5 °C/W TO-220F/TO-220F1 62.5 °C/W Junction to Ambient TO-251/TO-252 θJA 110 °C/W TO-220 1.0 °C/W TO-220F/TO-220F1 3.2 °C/W Junction to Case TO-251/TO-252 θJC 2.27 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 6N60-A 600 V Drain-Source Breakdown Voltage 6N60-B BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Forward VGS = 30V, VDS = 0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250 μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 770 1000 pF Output Capacitance COSS 95 120 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0 MHz 10 13 pF |
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