7N60Z

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-349.B

PARAMETER

SYMBOL

RATINGS

UNIT

7N60Z-A

600

V

Drain-Source Voltage

7N60Z-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

7.4

A

Continuous Drain Current

7.4

A

Pulsed Drain Current (Note 1)

29.6

A

Single Pulsed (Note 3)

600

mJ

Avalanche Energy

Repetitive (Note 2)

14.2

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/ TO-263

142

W

Power Dissipation

TO-220F/TO-220F1

48

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/ TO-263

62.5

°C/W

Junction to Case

TO-220/ TO-263

0.88

°C/W

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

7N60Z-A

600

V

Drain-Source Breakdown Voltage

7N60Z-B

650

V

Drain-Source Leakage Current

1

μA

Forward

10

μA

Gate- Source Leakage Current

Reverse

-10

μA

Breakdown Voltage Temperature Coefficient

BV

△

Referenced to 25°C

0.67

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

1

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

1400

pF

Output Capacitance

180

pF

Reverse Transfer Capacitance

16

21

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

70

ns

Turn-On Rise Time

170

ns

Turn-Off Delay Time

140

ns

Turn-Off Fall Time

(Note 1, 2)

130

ns

Total Gate Charge

29

38

nC

Gate-Source Charge

7

nC

Gate-Drain Charge

(Note 1, 2)

14.5

nC