Electronic Components Datasheet Search |
|
7N60G-X-TF1-T Datasheet(PDF) 2 Page - Unisonic Technologies |
|
7N60G-X-TF1-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 7N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-076,Ja ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 7N60-A 600 V Drain-Source Voltage 7N60-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A Continuous ID 7.4 A Drain Current Pulsed (Note 2) IDM 29.6 A Single Pulsed (Note 3) EAS 530 mJ Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 142 W Power Dissipation TO-220F/TO-220F1 PD 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220/TO-262/TO-263 62.5 °C/W Junction to Ambient TO-220F/TO-220F1 θJA 62.5 °C/W TO-220/TO-262/TO-263 0.88 °C/W Junction to Case TO-220F/TO-220F1 θJC 2.6 °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 7N60-A 600 V Drain-Source Breakdown Voltage 7N60-B BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA Forward VGS = 30V, VDS = 0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/△TJ ID = 250μA, Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V 7N60 1.0 Ω 7N60-F 1.2 Ω 7N60-M 1.2 Ω 7N60-Q 1.2 Ω Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 7N60-R 1.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 1400 pF Output Capacitance COSS 180 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0 MHz 16 21 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 70 ns Turn-On Rise Time tR 170 ns Turn-Off Delay Time tD(OFF) 140 ns Turn-Off Fall Time tF VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) 130 ns |
Similar Part No. - 7N60G-X-TF1-T |
|
Similar Description - 7N60G-X-TF1-T |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |