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9N90G-T47-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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9N90G-T47-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 9N90 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-217.E ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.0 A Single Pulsed(Note 3) EAS 900 mJ Avalanche Energy Repetitive(Note 2) EAR 28 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-247 160 W TO-3P 240 Power Dissipation TO-220F1 36 W TO-247 1.28 W/°C TO-3P 2.22 Linear Derating Factor above TC = 25°C TO-220F1 PD 0.288 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-247 50 °C/W TO-3P 40 Junction to Ambient TO-220F1 θJA 62.5 °C/W TO-247 0.78 °C/W TO-3P 0.52 Junction-to-Case TO-220F1 θJC 3.47 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 900 V Drain-Source Leakage Current IDSS VDS = 900 V, VGS = 0 V 10 μA Forward IGSSF VGS = 30 V, VDS = 0 V 100 nA Gate-Body Leakage Current Reverse IGSSR VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250μA, Referenced to 25°C 0.99 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10 V, ID = 4.5 A 1.12 1.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS 2100 2730 pF Output Capacitance COSS 175 230 pF Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0 V, f = 1.0 MHz 14 18 pF |
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