10N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-218.D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

10

A

Pulsed Drain Current (Note 2)

40

A

Avalanche Current (Note 2)

10

A

Single Pulsed (Note 3)

920

mJ

Avalanche Energy

Repetitive (Note 2)

24

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

TO-3P

240

Power Dissipation

TO-220F1

36

W

TO-3P

1.92

TO-220F1

0.288

°С/W

Junction Temperature

150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-3P

40

Junction to Ambient

TO-220F1

62.5

°С/W

TO-3P

0.52

Junction to Case

TO-220F1

3.47

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

800

V

10

Drain-Source Leakage Current

100

µA

Gate-Body Leakage Current

±100

nA

Breakdown Voltage Temperature

Coefficient

0.98

mV/°С

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Static Drain-Source On-Resistance

0.93

1.1

Ω

DYNAMIC PARAMETERS

Input Capacitance

2150 2800

pF

Output Capacitance

180

230

pF

Reverse Transfer Capacitance

15

20

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

50

110

Turn-ON Rise Time

130

270

Turn-OFF Delay Time

90

190

Turn-OFF Fall-Time

80

170

ns

Total Gate Charge

45

58

Gate Source Charge

13.5

Gate Drain Charge

17

nC