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10N80L-T3P-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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10N80L-T3P-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 10N80 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-218.D ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°С) ID 10 A Pulsed Drain Current (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 10 A Single Pulsed (Note 3) EAS 920 mJ Avalanche Energy Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 Power Dissipation TO-220F1 36 W TO-3P 1.92 Linear Derating Factor above TC = 25°С TO-220F1 PD 0.288 °С/W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=17.3mH, IAS=10A, VDD=50V, RG=25Ω, Satarting TJ=25°C 4. ISD ≤ 10 A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-3P 40 Junction to Ambient TO-220F1 θJA 62.5 °С/W TO-3P 0.52 Junction to Case TO-220F1 θJC 3.47 °С/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA 800 V VDS =800V, VGS =0 V 10 Drain-Source Leakage Current IDSS VDS =640V, TC =125°C 100 µA Gate-Body Leakage Current IGSS VDS =0 V, VGS = ±30 V ±100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID =250 µA, Referenced to 25°C 0.98 mV/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10 V, ID = 5.0 A 0.93 1.1 Ω DYNAMIC PARAMETERS Input Capacitance CISS 2150 2800 pF Output Capacitance COSS 180 230 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f=1MHz 15 20 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 50 110 Turn-ON Rise Time tR 130 270 Turn-OFF Delay Time tD(OFF) 90 190 Turn-OFF Fall-Time tF VDD=400V, ID=10.0A, RG=25Ω(Note 1,2) 80 170 ns Total Gate Charge QG 45 58 Gate Source Charge QGS 13.5 Gate Drain Charge QGD VDS =640V, VGS =10V, ID =10.0A (Note 1,2) 17 nC |
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