10N75G-TA3-T datasheet(3/6 Pages) UTC

Part #	10N75G-TA3-T

Description	10 Amps, 750 Volts N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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10N75

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-501.a

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

750

V

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ

ID=250μA,

Referenced to 25°C

0.98

V/°C

VDS=750V, VGS=0V

10

µA

Drain-Source Leakage Current

IDSS

VDS=640V, TC=125°C

100

µA

Forward

VDS=0V ,VGS=30V

100

nA

Gate-Source Leakage Current

Reverse

IGSS

VDS=0V ,VGS=-30V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=5A

0.93

1.1

Ω

Forward Transconductance

gFS

VDS=50V, ID=5.0A (Note 4)

5.8

S

DYNAMIC PARAMETERS

Input Capacitance

CISS

2150 2800

pF

Output Capacitance

COSS

180

230

pF

Reverse Transfer Capacitance

CRSS

VDS=25V,VGS=0V,f=1.0MHz

15

20

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

45

58

nC

Gate-Source Charge

QGS

13.5

nC

Gate-Drain Charge

QGD

VDS=600V, VGS=10V, ID=10A

(Note 4,5)

17

nC

Turn-ON Delay Time

tD(ON)

50

110

ns

Turn-ON Rise Time

tR

130

270

ns

Turn-OFF Delay Time

tD(OFF)

90

190

ns

Turn-OFF Fall Time

tF

VDD=350V, ID=10A, RG=25Ω

VDS=10V (Note 4,5)

80

170

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

10.0

A

Maximum Body-Diode Pulsed Current

ISM

40.0

A

Drain-Source Diode Forward Voltage

VSD

IS =10.0A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time

tRR

730

ns

Body Diode Reverse Recovery Charge

QRR

VGS=0V, IS=10.0A,

dIF/dt=100A/μs (Note 4)

10.9

μC

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=17.3mH, IAS=10A, VDD= 50V, RG=25Ω, Starting TJ=25°C

3. ISD ≤10A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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