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10N75G-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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10N75G-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 10N75 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-501.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 750 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 0.98 V/°C VDS=750V, VGS=0V 10 µA Drain-Source Leakage Current IDSS VDS=640V, TC=125°C 100 µA Forward VDS=0V ,VGS=30V 100 nA Gate-Source Leakage Current Reverse IGSS VDS=0V ,VGS=-30V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5A 0.93 1.1 Ω Forward Transconductance gFS VDS=50V, ID=5.0A (Note 4) 5.8 S DYNAMIC PARAMETERS Input Capacitance CISS 2150 2800 pF Output Capacitance COSS 180 230 pF Reverse Transfer Capacitance CRSS VDS=25V,VGS=0V,f=1.0MHz 15 20 pF SWITCHING PARAMETERS Total Gate Charge QG 45 58 nC Gate-Source Charge QGS 13.5 nC Gate-Drain Charge QGD VDS=600V, VGS=10V, ID=10A (Note 4,5) 17 nC Turn-ON Delay Time tD(ON) 50 110 ns Turn-ON Rise Time tR 130 270 ns Turn-OFF Delay Time tD(OFF) 90 190 ns Turn-OFF Fall Time tF VDD=350V, ID=10A, RG=25Ω VDS=10V (Note 4,5) 80 170 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 10.0 A Maximum Body-Diode Pulsed Current ISM 40.0 A Drain-Source Diode Forward Voltage VSD IS =10.0A, VGS=0V 1.4 V Body Diode Reverse Recovery Time tRR 730 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=10.0A, dIF/dt=100A/μs (Note 4) 10.9 μC Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=17.3mH, IAS=10A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3. ISD ≤10A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature |
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