10N90L-TA3-T datasheet(3/6 Pages) UTC

Part #	10N90L-TA3-T

Description	10 Amps, 900 Volts N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 6 page

10N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-502.a

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

900

V

Breakdown Voltage Temperature

Coefficient

BV

△

DSS/T

△ J ID=250µ

1.11

V/°C

Drain-Source Leakage Current

IDSS

VDS=900V

25

µA

Forward

VGS=+30V

100

nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=5V, ID=250µA

2.0

3.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=5A

1.2

Ω

Forward Transconductance

gFS

VDS=50V, ID=5A (Note 4)

7.85

S

DYNAMIC PARAMETERS

Input Capacitance

CISS

2760 3580 pF

Output Capacitance

COSS

245

290

pF

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

105

125

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

127

165

nC

Gate to Source Charge

QGS

19.2

nC

Gate to Drain Charge

QGD

VGS=10V, VDS=720V, ID=10A

(Note 4, 5)

56.8

nC

Turn-ON Delay Time

tD(ON)

29

70

ns

Rise Time

tR

54

20

ns

Turn-OFF Delay Time

tD(OFF)

161

330

ns

Fall-Time

tF

VDD=450V, ID=10A, RG=9.6Ω

(Note 4, 5)

47

105

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

10

A

Maximum Body-Diode Pulsed Current

(Note1)

ISM

Integral Reverse Pn-Diode In The

MOSFET

40

A

Drain-Source Diode Forward Voltage

(Note 4)

VSD

IS=10A, VGS=0V, TJ=25°C

1.4

V

Body Diode Reverse Recovery Time

tRR

690

ns

Body Diode Reverse Recovery Charge

QRR

IF=10A, dIF/dt=100A/µs, TJ=25°C

(Note 4)

11.94

µC

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 15mH, IAS = 10A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C

3. ISD ≤ 10A, di/dt ≤ 190A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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