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11N90G-TA3-T Datasheet(PDF) 1 Page - Unisonic Technologies |
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11N90G-TA3-T Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 6 page UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-497.a 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N90 is universally applied in high efficiency switch mode power supply, FEATURES * 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V * High switching speed * Improved dv/dt capability * 100% avalanche tested * Halogen Free SYMBOL 1 TO-220 1 TO-220F1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 11N90L-TA3-T 11N90G-TA3-T TO-220 G D S Tube 11N90L-TF1-T 11N90G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
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