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13N50L-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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13N50L-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  13N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-362.c ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 13 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 13 A Maximum Pulsed Drain-Source Diode Forward Current ISM 52 A Reverse Recovery Time tRR 290 nS Reverse Recovery Charge QRR VGS = 0V, IS = 13A, dIF / dt = 100A/μs (Note 1) 2.6 μC Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating ambient temperature |
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