15N65

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 7

www.unisonic.com.tw

QW-R502-481.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

650

V

Gate to Source Voltage

±30

V

Avalanche Current (Note 1)

15

A

Continuous

15

A

Continuous Drain Current

Pulsed (Note 1)

60

A

Single Pulsed (Note 2)

637

mJ

Avalanche Energy

Repetitive (Note 1)

25.0

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220F1

37

W

Power Dissipation

TO-247

312

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

TO-220F1

62.5

°C/W

Junction to Ambient

TO-247

40

°C/W

TO-220F1

3.3

°C/W

Junction to Case

TO-247

0.4

°C/W