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25N06 Datasheet(PDF) 2 Page - Unisonic Technologies |
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25N06 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 25N06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-450.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDS 60 V Drain-Gate Voltage (RGS=20kΩ) VDGR 60 V Gate-Source Voltage VGS ± 20 V TC=25°C 25 A Drain Current (Continuous) TC=100°C ID 17 A Drain Current (Pulsed) (Note 2) IDM 100 A Single Pulse Avalanche Energy (starting TJ =25°C, ID =25A, VDD =25 V) EAS 100 mJ Total Dissipation at TC=25°C PD 90 W Maximum Operating Junction Temperature TJ 175 °C Storage Temperature TSTG -65 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1.57 °C/W |
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