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50N60L-TM3-T Datasheet(PDF) 6 Page - Unisonic Technologies |
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50N60L-TM3-T Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 50N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-088.E TYPICAL CHARACTERISTICS 0.0 0 Drain Current, ID (A) 40 80 200 100 140 0.5 1.0 1.5 2.0 2.5 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 160180 VGS=20V *Note: 1. VGS=0V 2. 250µs Test 25°C 150°C VGS=10V |
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