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75N75L-TQ2-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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75N75L-TQ2-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 75N75 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-097.E ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC = 25°C ID 80 A Pulsed Drain Current (Note 2) IDM 320 A Single Pulsed Avalanche Energy (Note 3) EAS 700 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 12 V/ns TO-220/TO-263 300 W Power Dissipation TO-220F PD 45 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting TJ=25°C, ID=40A, VDD=37.5V 4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220/TO-263 62.5 °C /W Junction to Ambient TO-220F θJA 62.5 °C /W TO-220/TO-263 0.5 °C /W Junction to Case TO-220F θJC 3.33 °C /W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 75 V Drain-Source Leakage Current IDSS VDS = 75 V, VGS = 0 V 1 µA Forward VGS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 3.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 40 A 9.5 11 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS 3700 pF Output Capacitance COSS 730 pF Reverse Transfer Capacitance CRSS VGS = 0 V, VDS = 25 V f = 1MHz 240 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 25 ns Turn-On Rise Time tR 100 ns Turn-Off Delay Time tD(OFF) 66 ns Turn-Off Fall Time tF VDD = 37.5V, ID =45A, VGS=10V, RG=4.7Ω 30 ns Total Gate Charge QG 117 160 nC Gate-Source Charge QGS 27 nC Gate-Drain Charge QGD VDS = 60V, VGS = 10 V ID = 80A 47 nC |
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