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5302DG-T60-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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5302DG-T60-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 5302D NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R213-018. D ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tp<5ms) IBM 2 A TO-126 12.5 W TO-92 1.6 W TO-251 25 W Power Dissipation (TC≤25°С) TO-252 PD 25 W Junction Temperature TJ +150 °С Storage Temperature TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-126 122 TO-92 160 TO-251 100 Junction to Ambient TO-252 θJA 100 °С/W TO-126 10 TO-92 80 TO-251 5 Junction to Case TO-252 θJC 5 °С/W |
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