BC556/557/558

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-051.C

PARAMETER

SYMBOL

RATINGS

UNIT

BC556

-80

V

BC557

-50

V

Collector-Base Voltage

BC558

-30

V

BC556

-65

V

BC557

-45

V

Collector-Emitter Voltage

BC558

-30

V

Emitter-Base Voltage

-5

V

Collector Current (DC)

-100

mA

Power Collector Dissipation

625

mW

Linear Derating Factor above (Ta=25°C)

5

mW/°C

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

200

°C/W

Junction to Case

83.3

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

BC556

-65

V

BC557

-45

V

Collector-Emitter Breakdown Voltage

BC558

-30

V

BC556

-80

V

BC557

-50

V

Collector-Base Breakdown Voltage

BC558

-30

V

Emitter-Base Breakdown Voltage

-5.0

V

Collector Cut-Off Current

-15

nA

DC Current Gain

110

800

-90

-300

mV

Collector-Emitter Saturation Voltage

-250 -650

mV

-700

mV

Base-Emitter Saturation Voltage

-900

mV

-600 -660 -750

mV

Base-Emitter Turn-On Voltage

-800

mV

Current Gain Bandwidth Product

150

MHz

Output Capacitance

6

pF

Noise Figure

NF

2

10

dB

RANK

A

B

C

110 - 220

200 - 450

420 - 800