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BSS138 Datasheet(PDF) 2 Page - Unisonic Technologies |
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BSS138 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BSS138 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-271.c ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V DC 0.22 Continuous Drain Current Pulse ID 0.88 A 0.36 W Power Dissipation Derate Above 25°C PD 2.8 mW/°C Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 350 /W ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 50 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 72 mV/℃ VDS=50V, VGS=0V 0.5 Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 0.1 µA Gate–Body Leakage, Forward IGSS VDS=0V, VGS=±20V ±100 nA ON CHARACTERISTICS (Note) Gate-Threshold Voltage VGS(TH) VDS=VGS, ID=1m A 0.8 1.3 1.5 V Gate Threshold Voltage Temperature Coefficient ΔVGS(TH)/ΔTJ ID=1mA, Referenced to 25°C -2 mV/°C VGS=10 V, ID=0.22A 0.7 3.5 Static Drain–Source On–Resistance RDS(ON) VGS=4.5 V, ID=0.22A 1.0 6.0 Ω On-State Drain Current ID(ON) VGS=10 V, VDS=5V 0.2 A Forward Transconductance gFS VDS=10V, ID=0.22A 0.12 0.5 S DYNAMIC PARAMETERS Input Capacitance CISS 27 pF Output Capacitance COSS 13 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 6 pF SWITCHING PARAMETERS (Note) Total Gate Charge QG 1.7 2.4 nC Gate Source Charge QGS 0.1 nC Gate Drain Charge QGD VDS=25V, VGS=10V, ID=0.22A 0.4 nC Turn-ON Delay Time tD(ON) 2.5 5 ns Turn-ON Rise Time tR 9 18 ns Turn-OFF Delay Time tD(OFF) 20 36 ns Turn-OFF Fall-Time tF VDD=30V, ID=0.29A,VGS=10V, RG=6Ω, 7 14 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS=0.44A (Note) 0.8 1.4 V Max. Diode Forward Current IS 0.22 A Notes: Pulse test; pulse width ≤ 300us, duty cycle≤ 2% |
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