BSS138

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-271.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

50

V

Gate-Source Voltage

±20

V

DC

0.22

Continuous Drain Current

Pulse

0.88

A

0.36

W

Power Dissipation

Derate Above 25°C

2.8

mW/°C

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

350

/W

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

50

V

Breakdown Voltage Temperature

Coefficient

72

mV/℃

0.5

Zero Gate Voltage Drain Current

0.1

µA

Gate–Body Leakage, Forward

±100

nA

ON CHARACTERISTICS

(Note)

Gate-Threshold Voltage

0.8

1.3

1.5

V

Gate Threshold Voltage Temperature

Coefficient

-2

mV/°C

0.7

3.5

Static Drain–Source On–Resistance

1.0

6.0

Ω

On-State Drain Current

0.2

A

Forward Transconductance

0.12

0.5

S

DYNAMIC PARAMETERS

Input Capacitance

27

pF

Output Capacitance

13

pF

Reverse Transfer Capacitance

6

pF

SWITCHING PARAMETERS

(Note)

Total Gate Charge

1.7

2.4

nC

Gate Source Charge

0.1

nC

Gate Drain Charge

0.4

nC

Turn-ON Delay Time

2.5

5

ns

Turn-ON Rise Time

9

18

ns

Turn-OFF Delay Time

20

36

ns

Turn-OFF Fall-Time

7

14

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.8

1.4

V

Max. Diode Forward Current

0.22

A

Notes: Pulse test; pulse width ≤ 300us, duty cycle≤ 2%