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BSS138 Datasheet(PDF) 1 Page - Unisonic Technologies |
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BSS138 Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 3 page UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-271.c N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. FEATURES * RDS(ON)=3.5Ω @ VGS=10V * RDS(ON)=6.0Ω @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 2.Gate 1.Source 3.Drain SOT-23-3 1 2 3 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing BSS138G-AE2-R SOT-23-3 S G D Tape Reel MARKING |
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